TELIC

RECOMMENDED PROCESS FOR TELIC CHROME PHOTOMASK BLANKS

PROCESS FOR AZ 1350 RESIST

PROCESS STEP

EQUIPMENT

PROCESS PARAMETERS

EXPOSURE

Tamarack 142

25 mJ/cm²

DEVELOPMENT

APT 914

50 sec. (Cyantek 2:1 @ 22&degC)

RINSE

APT 914

40 sec. (DI Water)

ETCHING

APT 914

22 sec. Low & Mid-Reflective

RINSE

APT 914

40 sec. (DI Water)

SPIN DRY

APT 914

15 sec. (2,000 r.p.m.)

RESIST STRIP

 

10 min. (Concentrated Sulphuric acid @ 80&degC)

PROCESS FOR E-BEAM RESIST

PROCESS STEP

P.B.S.

CMS-EX(SS)

EXPOSURE

0.8 &microC/cm² @ 10kV

0.6 &microC/cm²

DEVELOPMENT TEMP. & P.H.

35% @ 15&degC

45% @ 23&degC

DEVELOPMENT TIME

60 sec.

60 sec.

RINSE 1

30 sec.

30 sec.

RINSE 2

 

30 sec.

SPIN DRY

30 sec.

30 sec.

POST BAKING

120&degC @ 30 min.

150&degC @ 30 min.

 

Wet Air 1 Torr

Etcher or Asher

DE-SCUM

10-20 sec.

3 min.

ETCH FORMULA

165 gm. Ceric Ammonium Nitrate.
42 ml. Perchloric Acid (@ 70%) + DI Water to Make 1,000 ml.

STRIPPING

Sulphuric Acid, 90&degC for 15 min.

Wet Air 1 Torr
Asher 400w for 25 min.

CLEANING

Scrub Cleaner

RECOMMENDED VENDORS- MASK PROCESSING CHEMISTRY:

MICROCHROME
1620-C Berryessa Rd.
San Jose, CA.95133

EXSIL Inc.
6541 Via Del Oro
San Jose, CA.95119

Tel: (408) 259-4948
Fax: (408) 259-4955

Tel: (408) 629-3142
Fax: (408) 629-3168

CR Etchant-CEN-300
Positive Developer-PPD-450

CR Etchant-Cyantek CR-9
Positive Developer-CC200

Telic Company
24832 Avenue Rockefeller
Valencia, CA 91355

Phone: 661.702.8603
Toll Free: (888) TELICCO
Fax: 661.257.6802
E-mail: telic2000@aol.com